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Recent developments in the synthesis of chemically modified nanomaterials for use in dielectric and electronics applications

Polymer nanocomposites (PNC) have attracted enormous scientific and technological interest due to their applications in energy storage, electronics, biosensing, drug delivery, cosmetics and packaging industry. Nanomaterials (platelet, fibers, spheroids, whiskers, rods) dispersed in different types of polymer matrices constitute such PNC....

A facile and low-cost Al 2 O 3 coating as an artificial solid electrolyte interphase layer on graphite/silicon composites for lithium-ion batteries

Graphite/silicon (G/Si) composites are considered as possible alternative anode materials to commercial graphite anodes. However, the unstable solid electrolyte interphase (SEI) on G/Si particles results in rapid capacity decay, impeding practical applications. Herein, a facile and low-cost Al 2 O 3 coating was developed to fabricate stable...

Impact of electrostatic doping on carrier concentration and mobility in InAs nanowires

We fabricate dual-gated electric double layer (EDL) field effect transistors based on InAs nanowires gated with an ionic liquid, and we perform electrical transport measurements in the temperature range from room temperature to 4.2 K. By adjusting the spatial distribution of ions inside the ionic liquid employed as gate dielectric, we electrostatically...

Template-assisted fabrication of Ag-nanoparticles@ZnO-nanorods array as recyclable 3D surface enhanced Raman scattering substrate for rapid detection of trace pesticides

We present a template-assisted fabrication method for a large-scale ordered arrays of ZnO nanorods (ZnO-NRs) modified with Ag nanoparticles (Ag-NPs), which possess high-density three-dimensional (3D) hot spots uniformly dispersed all over the substrate, being beneficial to ultrahigh sensitivity of surface enhanced Raman scattering (SERS)...

Domain modulation in LiNbO 3 films using litho piezoresponse force microscopy

Domain engineering plays a pivotal role in the development of ferroelectric non-volatile memory devices. In this work, we mainly focus on the domain kinetic in ion-sliced single crystal LiNbO 3 thin films under tip-induced electric fields using piezoresponse force microscope (PFM). Polarization reversal takes place when the electric fields...

Thermal interface materials with graphene fillers: review of the state of the art and outlook for future applications

We review the current state-of-the-art graphene-enhanced thermal interface materials for the management of heat in the next generation of electronics. Increased integration densities, speed and power of electronic and optoelectronic devices require thermal interface materials with substantially higher thermal conductivity, improved reliability,...

Highly efficient and blue-emitting CsPbBr 3 quantum dots synthesized by two-step supersaturated recrystallization

Highly efficient and blue-emitting CsPbBr 3 quantum dots were successfully synthesized by two-step supersaturated recrystallization under ambient condition. This method could control the particle size within 2.8 nm, thus resulting in strong quantum confinement effect of the products. The as-synthesized CsPbBr 3 quantum dots presented outstanding...

Stochastic models of systems for Nanotechnology: from micro to macro scale

Computer modeling technique based on the theory of stochastic processes have been used in order to provide a realistic simulation of the behavior of nanoscopic systems, related in particular to plasma reactors in microelectronic device production. Basing on decades of experience, we show here, with new results, that the universality of such methods...

Design of n + -base width of two-terminal-electrode vertical thyristor for cross-point memory cell without selector

The n + -base width of a two-terminal vertical thyristor fabricated with n ++ (top-emitter)-p + (base)-n + (base)-p ++ (bottom-emitter) epitaxial Si layers was designed to produce a cross-point memory cell without a selector. Both the latch-up and latch-down voltages increased linearly with the n + -base width, but the voltage increase slope of...

Verifying the band gap narrowing in tensile strained Ge nanowires by electrical means

Group-IV based light sources are one of the missing links towards fully CMOS compatible photonic circuits. Combining both silicon process compatibility and a pseudo-direct band gap, germanium is one of the most viable candidates. To overcome the limitation of the indirect band gap and turning germanium in an efficient light emitting material,...

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