Wiley Online Library : Advanced Electronic Materials
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Orbital Current Boosting Magnetization Switching Efficiency in Metallic Superlattices

Orbitronics advances spintronics by leveraging orbital current for efficient magnetization switching. The [W/Ti]3 superlattices demonstrates superior damping-like torque efficiency. This is due to the orbital Rashba–Edelstein effect at the W/Ti interface, reducing critical current density for magnetization switching. This orbital-current-utilizing...

Sat Oct 5, 2024 12:44
Improving Charge Transport and Environmental Stability of Carbohydrate‐Bearing Semiconducting Polymers in Organic Field‐Effect Transistors

Various synthetic design elements and device fabrication parameters are investigated and optimized to enhance the performance of isoindigo-based carbohydrate-bearing semiconductors in organic field-effect transistors. The new polymers exhibit significantly improved charge transport and air stability, achieving up to three orders of magnitude increase...

Sat Oct 5, 2024 12:44
Temperature‐Dependent Dynamics of Charge Carriers in Tellurium Hyperdoped Silicon

Tellurium-hyperdoped silicon (Si:Te) shows significant promise as an intermediate band material candidate for highly efficient solar cells and photodetectors. Time-resolved THz spectroscopy (TRTS) is used to study the excited carrier dynamics of Si:Te using two photoexcitation wavelengths at cryogenic temperatures and various dopant concentrations....

Sat Oct 5, 2024 12:44
Gate‐Controlled Photoresponse in an Individual Single‐Walled Carbon Nanotube Modified with a Fluorescent Protein

Bioconjugates of carbon nanomaterials and photosensitive proteins are a promising strategy for next-generation optoelectronics devices. In this study, individual single-walled carbon nanotubes bound with red fluorescent protein are studied to understand the photoresponse effect. Reversible switching between positive and negative photocurrent appears...

Sat Oct 5, 2024 12:44
Investigation and Improvement of the Bias Temperature Instability in Carbon Nanotube Transistors

In this work, the reliability of BTI in top-gate CNT FETs under a wide range of temperatures is investigated firstly. The CNT devices not only exhibit a high on/off current ratio (Ion/Ioff, ≈105) and a low subthreshold swing (SS) ranging from 200 to 400 K, but also the threshold voltage (Vth) shifts caused by BTI become 2–3 times smaller than previous...

Sat Oct 5, 2024 12:44
Enhanced Ferroelectricity of Hf‐Based Memcapacitors by Adopting Ti Insert‐Layer and C–V Measurement for Constructing Energy‐Efficient Reservoir Computing Network

The ferroelectric performance of TiN/Ti/HZO/TiN memcapacitors is improved by optimizing the Ti insertion layer design and Capacitor-Voltage (C–V) test conditions. A hierarchical parallel and hardware-implemented reservoir computing (RC) network is constructed by using 34 memcapacitive synapses, which show high recognition accuracy (≈96.10%) and low...

Sat Oct 5, 2024 12:44

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