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Efficient Room‐Temperature Voltage Control of Picosecond Optical Spin Orientation Using a III‐V Semiconductor Nanostructure

Room-temperature voltage control of optical polarization in the range of 3–15%, corresponding to a 12–60% change in relative spin polarization is demonstrated without magnetic field by using a III-V semiconductor nanostructure. The spin-flip scattering rate within quantum dots is electric-field-controlled in the time domain of tens of picoseconds, which...

Influence of Tetraphenylbenzene on the OFET Behavior of Triarylamines

New tetraphenylbenzene-based triarylamines are synthesized via Diels–Alder cycloaddition reactions to explore the organic field-effect transistor (OFET) properties, which exhibited p-channel conductivity with the highest mobility of 0.72 cm2 V−1 s−1 and on/off current ratio of 107 and the lowest threshold voltage of −2 V. These results prove that the...

Beyond the 2D Field‐Effect Charge Transport Paradigm in Molecular Thin‐Film Transistors

Evidence is reported that the interfacial 2D paradigm used to describe the field-effect charge transport in organic field-effect transistors must be overcome. The out-of-plane molecular packing and orientational order in the bulk of polycrystalline films must be taken into account to design organic transistors with optimized electronic and optoelectronic...

Inkjet‐Printed, Deep Subthreshold Operated Pseudo‐CMOS Inverters with High Voltage Gain and Low Power Consumption

The deep subthreshold operated pseudocomplementary metal-oxide semiconductor depletion-load inverters based on amorphous-indium-gallium-zinc oxide thin film transistors are fabricated. The printed inverters show signal gain ≈285 for 2T- and 329 for 4T-type device design. The printed inverters (30 kHz) and ring oscillators (6.7 kHz) show operation frequency...

A Deep Study of Resistance Switching Phenomena in TaOx ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification

This paper employs theoretic methods to gain a deep insight into the resistance switching phenomena emerging in a representative redox-based random access memory cell. The application of a powerful analysis tool to an accurate physics-based device model enables to understand the complex mechanisms, which induce memory loss in the non-volatile memristor...

Hydrogel‐Based Real‐Time Wireless Liquid Level Monitoring System for Size‐Independent Infusion Bags

Coplanar capacitive type liquid level sensor based on hydrogel electrodes integrated with flexible printed circuit board (FPCB) for infusion bag size-independent real-time wireless liquid level monitoring. Abstract The monitoring of saline levels during medication has become a tedious process for practitioners. Regardless of the infusion bag...

Antiperovskite Magnetic Materials with 2p Light Elements for Future Practical Applications

Transition metal alloys and compounds with 2p light elements are used in various platforms because of their fascinating magnetic, mechanical, and spintronic properties. In particular, antiperovskite nitrides contribute to improving spintronic applications. In this review, each application is highlighted, and the role of light elements and their future...

Screening 0D Materials for 2D Nanoelectronics Applications

The report is on a computational screening study to find promising 0D materials for use in 2D nanoelectronics applications. 16 materials belonging to 6 structural prototypes are found with high melting points and high band gaps, a range of static dielectric constants, and all showing van der Waals-bonding with 2D materials. Abstract As nanoelectronic...

Gate‐Tunable Photovoltaic Behavior and Polarized Image Sensor Based on All‐2D TaIrTe4/MoS2 Van Der Waals Schottky Diode

A T d -TaIrTe4/MoS2 van der Waals heterojunction photodetector is reported. Owing to the moderate thickness of TaIrTe4 and the effective build-in electric field, the Schottky diode shows high-performance self-powered photodetection and high-resolution imaging. Besides, a high photocurrent anisotropic ratio up to 4.19 is realized. This work provides...

Self‐Imaging Based Programmable Spin‐Wave Lookup Tables

The self-imaging of spin waves as a mechanism of implementing logic operations in programmable computing devices. In numerical simulations, a method of encoding information in spin-wave phase and amplitude to create a Talbot effect-based lookup table functionality is proposed. Abstract Inclusion of spin waves into the computing paradigm, where...

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