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Flexible Hybrid Electronics via Near‐Infrared Radiation‐Assisted Soldering of Surface Mount Devices on Screen Printed Circuits

An efficient approach for soldering electrical components onto printed circuits in a rapid, scalable, and nondestructive fashion suitable for flexible electronics applications is demonstrated. The near-infrared radiation settings required to effectively melt and fuse the solder are optimized via a systematic study involving the analysis on intermetallic...

Exploration of Chemical Composition of In–Ga–Zn–O System via PEALD Technique for Optimal Physical and Electrical Properties

Adjusting the metal composition of In–Ga–Zn–O (IGZO) is required to develop heterostack and/or 3D structures. Sequential plasma-enhanced atomic layer deposition (PEALD) methods are introduced to adjust the composition of IGZO, and novel crystal structures are achieved. Based on a comprehensive analysis of the resulting physical and electrical properties,...

Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors

A metrological materials-to-device computational approach that extracts defects characteristics from the experimental device electrical data and connects them to the microscopic properties of the material is proposed. This protocol is applied to amorphous GeSe-based ovonic threshold switching selectors. This method unveils the role of electrical traps...

Ambipolarity Regulation of Deep‐UV Photocurrent by Controlling Crystalline Phases in Ga2O3 Nanostructure for Switchable Logic Applications

The work reports, for the first time, that a pure Ga2O3 photoelectrochemical system exhibits ambipolar photocurrent behavior induced by deep ultraviolet, which is closely linked to the crystalline phase of Ga2O3 (α or β). The adjustable logic gates devices based on the ambipolar photocurrent behavior of α-Ga2O3 nanorods can offer a new path for the...

High‐κ and High‐Temperature Dipolar Glass Polymers Based on Sulfonylated and Cyanolated Poly(Arylene Ether)s for Capacitive Energy Storage

A new class of organo-soluble dipolar glass polymers (DGPs) with highly dipolar side groups are designed and prepared. These DGPs exhibit desirable physical properties, including relatively high dielectric constant, high glass transition temperature, low dielectric loss, and mechanical toughness, which can be tailored by different dipolar groups and...

C8‐BTBT‐C8 Thin‐Film Transistors Based on Micro‐Contact Printed PEDOT:PSS/MWCNT Electrodes

Microstructured source and drain poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) electrodes are prepared onto spin-cast C8-BTBT-C8 films using microcontact printing. Only the precise control of the pressure yields high structural quality of the deposited electrodes. The addition of multi-walled carbon nanotubes to the PEDOT:PSS ink...

Structural Stability and Electronic Transport Properties of Nb2C‐MXenes under High Pressure

High-pressure experiments on the structural and electronic transport properties of Nb2C-MXenes prove that Nb2CF x becomes disordered above 20 GPa and loses its layered structure, while Nb2CCl x maintains its layered structure up to 42.5 GPa. The Cl surface termination not only can lead to superconductivity, but also enhances the structural...

Ultrafast Control of Interfacial Exchange Coupling in Ferromagnetic Bilayer

Ultrafast optically controlled interfacial exchange interactions in Co2FeAl/(Ga,Mn)As heterostructures are demonstrated. The excitation efficiency of the bilayer is improved by 30–40 times as compared with single Co2FeAl film at 5 K due to the modification of exchange coupling via photoexcited charge transfer between two ferromagnetic layers. ...

Tunable Quantum Dots from Atomically Precise Graphene Nanoribbons Using a Multi‐Gate Architecture

The device integration of 9-atom wide armchair graphene nanoribbons (GNR) into a multi-gate field-effect transistor geometry is reported. Low-temperature transport spectroscopy measurements reveal quantum dot (QD) behavior with rich Coulomb diamond pattern. It is shown that the additional gates enable differential tuning of the QDs in the nanojunction,...

Unlocking AlN Piezoelectric Performance with Earth‐Abundant Dopants

Harnessing strong piezoelectric performance in complementary metal–oxide–semiconductor compatible, aluminum nitride (AlN) thin film materials will open the door to many currently inaccessible piezoelectric capabilities. In this work, it is demonstrated, both theoretically and experimentally, that doping AlN with common and affordable group IVB transition...

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