Wiley Online Library : Advanced Electronic Materials
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Universal Synaptic Plasticity of Interface‐Based Second‐Order Memristors

The biomimetic universal character of time- and rate-dependent synaptic responses in dynamic memristors, La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3, of varying resistance range is demonstrated. The memristive switching at interfaces is assessed by a compact model. Abstract Second-order memristors with their internal short-term dynamics display...

Sun Apr 28, 2024 13:00
Ti3C2Tx Electromagnetic Shielding Performance: Investigating Environmental Influences and Structural Changes

This article explores MXene materials for electromagnetic interference (EMI) shielding in the context of 5G communication technologies. It details a new protocol for selectively etching aluminum from Ti3AlC2, resulting in a significant increase in MXene flakes' yield. Additionally, it assesses the long-term stability and effectiveness of MXene films...

Sun Apr 28, 2024 13:00
Interference Lithography‐Based Fabrication of 3D Metallic Mesostructures on Reflective Substrates using Electrodeposition‐Compatible Anti‐Reflection Coatings for Power Electronics Cooling

“This paper explores the innovative application of nanostructured copper oxide (nCO) coatings, showcasing their electrochemical reducibility and anti-reflection properties for interference lithography. It investigates the efficient absorption of radiation and the electrodeposition capabilities within intricate templates. Enhanced heat transfer properties...

Sun Apr 28, 2024 13:00
Specific and Label‐Free bioFET Sensing of the Interaction Between the Electrically Neutral Small Estriol Molecule and Its Antibody in a Microliter Drop of Diluted Plasma

The Miniature Meta-Nano-Channel (MNC) field-effect bioFET is designed for sensing the electrostatic perturbation between estriol and its antibody toward a potential point-of-care device. The MNC bioFET is currently employed for real-time, specific, and label-free detection of estriol in 0.5 µL drops of diluted plasma with a limit-of-detection of 1...

Sat Apr 27, 2024 12:00
Self‐Powered Broadband Photodetectors Based on Si/SnS2 and Si/SnSe2 p–n Heterostructures

Self-Powered Broadband Photodetectors fabricated using Si/SnS2 and Si/SnSe2 p–n Heterostructures via hydrothermal method. This innovative pyro-phototronic-based SnS2 heterojunction delivers rapid response rates within a broad response range from 365 to 850 nm. Similarly, the SnSe2 heterojunction device exhibits superior photosensitivity under self-power...

Wed Apr 24, 2024 12:40
Intrinsically Stretchable Polymer Semiconductor with Regional Conjugation for Stretchable Electronics

“Regional conjugation” strategy is developed to design intrinsically stretchable and high-performance polymer semiconductor diketopyrrolopyrrole-thieno[3,2-b]thiophene (DPPTT)−urethane with oligo-DPPTT conjugated units and alkyl urethane nonconjugated units, enabling maintaining the good charge-transporting property under stretching. Fully stretchable...

Wed Apr 24, 2024 12:40

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